Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

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Published 17 April 2009 ©2009 The Japan Society of Applied Physics
, , Citation Kunimichi Omae et al 2009 Appl. Phys. Express 2 052101 DOI 10.1143/APEX.2.052101

1882-0786/2/5/052101

Abstract

We compared the lasing characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) fabricated using a GaN substrate with those fabricated using a sapphire substrate. The original substrates are removed from the devices after the devices have been bonded to Si substrates. Consequently, with the exception of the cavity length, the two kinds of fabricated VCSELs have almost the same structures. The VCSELs fabricated using a GaN substrate have a higher maximum output power (0.62 mW) and longer lifetimes than those fabricated using a sapphire substrate. Even for the VCSELs fabricated with a GaN substrate, 10-min operation causes their threshold current to increase.

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10.1143/APEX.2.052101